Fully Transparent Transceiver Using Single Binary Oxide Thin Film Transistors
نویسندگان
چکیده
منابع مشابه
Tin oxide transparent thin-film transistors
A SnO2 transparent thin-film transistor (TTFT) is demonstrated. The SnO2 channel layer is deposited by RF magnetron sputtering and then rapid thermal annealed in O2 at 600 ̊C. The TTFT is highly transparent, and enhancement-mode behaviour is achieved by employing a very thin channel layer (10–20 nm). Maximum field-effect mobilities of 0.8 cm2 V−1 s−1 and 2.0 cm2 V−1 s−1 are obtained for enhancem...
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ژورنال
عنوان ژورنال: Advanced Electronic Materials
سال: 2020
ISSN: 2199-160X,2199-160X
DOI: 10.1002/aelm.201901083